Focus on silicon carbide epitaxial wafer for 13 years
Worlds leading silicon carbide epitaxial wafer manufacturers
TYSiC provides N-type and P-type doped 6/8-inch SiC epitaxial wafers for the production of 650V~3300V, 3300V~20000V unipolar and bipolar power devices, mainly including SBD, MOSFET, JBS, IGBT, and etc.
